PART |
Description |
Maker |
SPW11N80C3 SPW11N80C3-11 |
New revolutionary high voltage technology
|
Infineon Technologies A...
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SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
SPA11N60CFD SPA11N60CFD10 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP06N60C3 SPP06N60C307 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP11N60CFD07 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
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SPP24N60C3 SPP24N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPN03N60S5 SPN03N60S505 |
New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated
|
Infineon Technologies AG
|
SPB02N60S5 SPB02N60S507 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
IPW60R099CP IPW60R099CP08 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
SPI16N50C3 SPP16N50C307 SPA16N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPP17N80C3 SPP17N80C307 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
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